http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102212781-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2115-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 2014-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102212781-B1 |
| titleOfInvention | Light emitting device and lighting system |
| abstract | The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system. The light emitting device according to the embodiment includes a first conductivity type semiconductor layer; An active layer on the first conductivity type semiconductor layer; An Al z Ga 1-z N layer (where 0≦z≦1); may be included on the active layer. An embodiment may include an In x Al y Ga 1-xy N superlattice layer (where 0≤x≤1, 0≤y≤1) between the active layer and the Al z Ga 1-z N layer. |
| priorityDate | 2014-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.