http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102212421-B1

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filingDate 2019-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9baa2c66d741145dc890d2e43fb864c
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publicationDate 2021-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102212421-B1
titleOfInvention Charge plasma effect applied semiconductor element and manufacturing method of the same
abstract The present invention relates to a semiconductor device and a method of manufacturing the same, wherein the semiconductor device includes a body, a doped region formed in at least one direction of the body, and a terminal formed in the doped region facing the body, wherein the doped region is inclined It may include at least one corner formed to be bent or rounded.
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priorityDate 2019-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 37.