http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102212301-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2019-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102212301-B1 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | The present invention provides a transistor having good characteristics. For example, in manufacturing a transistor having a bottom gate type/bottom contact structure, the conductive layer constituting the source and the drain is a three-layer stacked structure, and etching is performed in two steps. That is, an etching method having a high etching rate for at least the second film and the third film is employed for the first etching step, and the first etching step is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that for the first etching process and the etching rate for the "layer formed in contact with the lower side of the first film" is lower than that for the first etching process is adopted. After performing the second etching process, the sidewall of the second film is slightly etched in order to remove the resist mask using a resist removing solution. |
| priorityDate | 2010-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.