| abstract |
The present invention controls the in-plane film thickness distribution of a film formed on a substrate. A process of preparing a substrate, supplying an inert gas to the substrate from the first supply unit, supplying an inert gas from the second supply unit to the substrate, and crossing a straight line passing through the center of the substrate and the second supply unit to the substrate. In the step of forming a film on the substrate by supplying the processing gas from the third supply unit provided on the opposite side to the first supply unit, the flow rate of the inert gas supplied from the first supply unit and the second supply unit By controlling the balance of the flow rate of the supplied inert gas, the in-plane thickness distribution of the film formed on the substrate is adjusted. |