| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2013-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102209665-B1 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
The present invention provides a transistor having stable electrical characteristics. A transistor with a small current when off is provided. It provides an enhancement type transistor. A transistor with high field effect mobility is provided. Transistors are provided with a small number of steps. It provides a transistor with good yield. A semiconductor device having the above transistor is provided. A semiconductor device in which a region in which a channel is formed is protected. A semiconductor device having a region in a semiconductor layer that protects a region in which a channel is formed. It is a semiconductor device having a layer protecting a region in which a channel is formed. A semiconductor device having a low density of defect states in a region or/and a layer protecting a region in which a channel is formed. It is a semiconductor device with a low density of defect states in a region where a channel is formed. |
| priorityDate |
2012-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |