Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-566 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-298 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-568 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48 |
filingDate |
2014-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2021-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-102206378-B1 |
titleOfInvention |
Surface encapsulation for wafer bonding |
abstract |
Techniques for wafer bonding with an encapsulation layer are disclosed. A first semiconductor substrate is provided. Then, an encapsulation layer is formed on the top of the first semiconductor substrate. The encapsulation layer is formed of an encapsulating material that produces a stable oxide when exposed to an oxidizing agent. A first bonding layer is formed on top of the encapsulation layer. Next, a second semiconductor substrate is provided. A second bonding layer is formed on top of the second bonding layer. Then, the first semiconductor substrate is bonded to the second semiconductor substrate by attaching the first bonding layer to the second bonding layer. |
priorityDate |
2014-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |