| abstract |
A semiconductor device structure is provided. The first semiconductor device includes a first conductive layer formed over a first substrate, a first etch stop layer formed over the first conductive layer, and the first etch stop layer directly contacts the first conductive layer. A first bonding layer is formed on the first etch stop layer, and a first bonding via is formed through the first bonding layer and the first etch stop layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over the second etch stop layer, and a second bonding via formed through the second bonding layer and the second etch stop layer. There is a bonding structure between the first substrate and the second substrate, and the bonding structure includes a first bonding via bonded to the second bonding via. |