http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102200018-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
filingDate | 2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-102200018-B1 |
titleOfInvention | Light emitting device |
abstract | The light emitting device disclosed in the embodiment includes: a light emitting structure layer including a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer; A groove exposing different regions under the first semiconductor layer; A first contact layer disposed in the groove and in contact with the first semiconductor layer; A first electrode disposed outside a sidewall of the light emitting structure layer and connected to the first contact layer; An insulating layer disposed on the contact layer and exposing a lower surface of the second semiconductor layer; A second contact layer disposed on a lower surface of the second semiconductor layer; A reflective layer disposed under the second contact layer; A bonding layer disposed under the reflective layer; And a support member disposed under the reflective layer, wherein the bonding layer overlaps the first electrode in a vertical direction and includes first protrusions disposed above a horizontal extension line of an upper surface of the active layer of the light emitting structure layer. |
priorityDate | 2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.