http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102197452-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14632 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-47635 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2020-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102197452-B1 |
| titleOfInvention | Semiconductor device and method for manufacturing the same |
| abstract | The present invention provides a highly reliable semiconductor device by imparting stable electrical properties to a transistor using an oxide semiconductor film. By forming a gate electrode layer on the substrate, forming a gate insulating film over the gate electrode layer, forming an oxide semiconductor film over the gate insulating film, and forming a conductive film over the oxide semiconductor film, the region near the interface of the oxide semiconductor film in contact with the conductive film is amorphized. Then, after performing the heat treatment, the conductive film is processed to form a source electrode layer and a drain electrode layer, and a source electrode layer and a drain electrode layer are formed to remove the amorphized region of the exposed oxide semiconductor film. |
| priorityDate | 2012-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.