http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102196949-B1

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filingDate 2013-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102196949-B1
titleOfInvention Thin film transistor, method for manufacturing the same and display device comprising the same
abstract The thin film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer formed on the substrate and including a first oxide semiconductor layer and a first barrier layer, and a second oxide semiconductor layer formed on the first active layer. And a second active layer including an intermediate barrier layer, a gate insulating layer formed on the second active layer, a second gate electrode formed on the gate insulating layer and electrically connected to the first gate electrode, a second gate electrode, and a first active layer. And an interlayer insulating film formed on the layer and the second active layer, and a source electrode and a drain electrode electrically connected to the first and second active layers.
priorityDate 2013-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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