http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102196949-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate | 2013-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-102196949-B1 |
titleOfInvention | Thin film transistor, method for manufacturing the same and display device comprising the same |
abstract | The thin film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer formed on the substrate and including a first oxide semiconductor layer and a first barrier layer, and a second oxide semiconductor layer formed on the first active layer. And a second active layer including an intermediate barrier layer, a gate insulating layer formed on the second active layer, a second gate electrode formed on the gate insulating layer and electrically connected to the first gate electrode, a second gate electrode, and a first active layer. And an interlayer insulating film formed on the layer and the second active layer, and a source electrode and a drain electrode electrically connected to the first and second active layers. |
priorityDate | 2013-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.