| abstract |
Methods and precursor compositions for depositing multi-component films are described herein. In one embodiment, the methods and compositions described herein are germanium-containing films such as germanium tellurium, antimony germanium, and germanium antimony tellurium (GST) films via atomic layer deposition (ALD) for phase change memory and photovoltaic devices. And/or other germanium, tellurium and selenium based metal compounds. In this or other embodiments, the Ge precursor used comprises only trichloroger. |