| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate |
2014-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102193085-B1 |
| titleOfInvention |
Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits |
| abstract |
A method of forming an enhancement mode GaN HFET device having self-aligned isolation regions in contact openings or metal mask windows. Advantageously, the method does not require a dedicated isolation mask and associated process steps, thus reducing manufacturing costs. The method includes providing an EPI structure having a substrate, a buffer layer, a GaN layer and a barrier layer. A dielectric layer is formed over the barrier layer, and openings are formed in the dielectric layer for the device contact openings and the isolation contact openings. |
| priorityDate |
2013-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |