| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2014-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102190673-B1 |
| titleOfInvention |
Semiconductor element having mid-gap work function metal gate electrode |
| abstract |
A semiconductor device having intermediate gap work function metal gate electrodes is described. The semiconductor device includes a plurality of gate patterns, and the gate patterns have different gate electrode metals or different gate electrode metal thicknesses. |
| priorityDate |
2014-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |