http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102187181-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2257 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 |
| filingDate | 2017-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102187181-B1 |
| titleOfInvention | Parallel access technologies within memory sections through section independence |
| abstract | A memory device having multiple sections of a memory cell, such as a ferroelectric memory cell (a hybrid RAM (HRAM) cell), can provide simultaneous access to memory cells within an independent section of the memory device. The first memory cell may be activated, and it may be determined that the second memory cell is independent of the first memory cell. If the second memory cell is independent of the first memory cell, the second memory cell can be activated before the end of operations in the first memory cell. In the memory section, the latch hardware may latch an address in the memory sections to allow a new address to be provided in another section to access the second memory cell. |
| priorityDate | 2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.