http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102185425-B1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03048 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304 |
filingDate | 2018-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-102185425-B1 |
titleOfInvention | GaN-Based light receiving element |
abstract | The present invention includes a substrate, a first and second semiconductor layers disposed on the substrate, and a light absorbing layer disposed on the first and second semiconductor layers and absorbing light of multiple wavelengths, wherein the light absorbing layer And a first light absorbing layer absorbing light of a first wavelength, and a second light absorbing layer absorbing light of a second wavelength different from the first wavelength. |
priorityDate | 2018-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 13.