abstract |
The present invention, SiC-Si 3 N 4 relates to a production method and hence the SiC-Si 3 N 4 composite material prepared in accordance with the composite material, in the step, and 1100 ℃ to 1600 ℃ on the mold to prepare the mold, Si , And introducing a raw material gas containing N and C to form a SiC-Si 3 N 4 composite material. |