http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102178732-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2013-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102178732-B1 |
| titleOfInvention | Semiconductor device |
| abstract | A substrate comprising a PMOSFET region and an NMOSFET region is provided. A first gate electrode and a second gate electrode are provided on the PMOSFET region, and a third gate electrode and a fourth gate electrode are provided on the NMOSFET region. A connection line provided with a connection contact connecting the second gate electrode and the third gate electrode, provided on the connection contact, and crossing the connection contact to connect the first gate electrode and the fourth gate electrode Is provided. |
| priorityDate | 2013-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.