http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102175547-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66818 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2013-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102175547-B1 |
| titleOfInvention | Pre-sculpting of si fin elements prior to cladding for transistor channel applications |
| abstract | Transistor fin elements (eg fin or tri-gate) may be modified by radio frequency (RF) plasma and/or thermal treatment for the purpose of dimensional sculpting. The etched, thin fins first form wider single crystal fins, and after depositing the trench oxide between the wider fins, narrower single crystal fins with intact top and sidewalls to epitaxially grow the active channel material. It can be formed by etching wider fins using a second etch to form. This second etch can remove the 1 nm to 15 nm thick top surfaces and sidewalls of the wider fins. This leaves behind (1) chlorine or fluorine-based chemicals using low ionic energy plasma treatment, or (2) etch residues that may interfere with the quality of epitaxial growth of the second material through active ion bombardment, oxidation, or The thickness can be removed by using low temperature heat treatment that does not damage the pins. |
| priorityDate | 2013-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.