http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102171265-B1

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filingDate 2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102171265-B1
titleOfInvention Patterning method using metal mask, and method for fabricating semiconductor device comprising the same patterning method
abstract The technical idea of the present invention provides a patterning method using a metal mask capable of easily forming a hole having a high aspect ratio, and a method of manufacturing a semiconductor device including the patterning method. The patterning method includes sequentially forming a lower metal layer and an upper metal layer on an etch target layer; Forming an upper metal mask by patterning the upper metal layer; Forming a lower metal mask by patterning the lower metal layer using the upper metal mask; And patterning the etch target layer by using the upper metal mask.
priorityDate 2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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