http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102168512-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-465 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 |
| filingDate | 2013-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102168512-B1 |
| titleOfInvention | Etchant and etching process for oxides containing at least indium and gallium |
| abstract | The present invention relates to an etching solution and an etching method that can be suitably used for etching oxides containing at least indium and gallium, such as an oxide composed of indium, gallium, and oxygen, or indium, gallium, zinc, and oxygen. According to a preferred aspect of the present invention, by using an etching solution containing sulfuric acid or a salt thereof, and carboxylic acid (except for oxalic acid) or a salt thereof, suitable etching for etching an oxide containing at least indium and gallium It has a rate, has good debris removal property, has low corrosiveness to wiring materials, and does not generate precipitates even when the concentration of the oxide dissolved in the etching solution is high, and a suitable etching rate can be maintained. |
| priorityDate | 2012-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 82.