| abstract |
One of the objectives is to provide a semiconductor device using an oxide semiconductor with stable electrical properties and to achieve high reliability. A first insulating film is formed, on the first insulating film, a source electrode and a drain electrode, and an oxide semiconductor film electrically connected to the source and drain electrodes are formed, and the oxide semiconductor film is subjected to heat treatment to obtain hydrogen atoms in the oxide semiconductor film. And oxygen doping treatment to the oxide semiconductor film from which hydrogen atoms have been removed, supplying oxygen atoms in the oxide semiconductor film, forming a second insulating film on the oxide semiconductor film supplied with oxygen atoms, and forming a second insulating film on the oxide semiconductor film on the second insulating film This is a method of manufacturing a semiconductor device in which a gate electrode is formed in a region overlapping a film. |