http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102161019-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-16 |
| filingDate | 2013-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102161019-B1 |
| titleOfInvention | Composition for etching titanium nitrate layer-tungsten layer containing laminate, method for etching using the same and semiconductor device manufactured by using the same |
| abstract | In the present invention, the etch selectivity of the titanium nitride film and the tungsten film can be maintained at about 1, there is no decrease in the etch rate even when used for a long time in a high temperature process, and an etching composition for a laminate of a titanium nitride film and a tungsten film having an excellent life time, A method of etching a laminate of a titanium nitride film and a tungsten film using the same, and a semiconductor device including the same are provided. |
| priorityDate | 2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.