http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102160845-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-1776 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-177 |
| filingDate | 2014-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102160845-B1 |
| titleOfInvention | Storage device and semiconductor device |
| abstract | The present invention provides a low power storage device. The memory device includes a first transistor, a second transistor, a logic element, and a semiconductor element. The second transistor controls the supply of the first signal to the gate of the first transistor. When the potential of the input second signal changes from the first potential to a second potential lower than the first potential, the logic element changes the potential of the first terminal of the first transistor from the second potential to a second potential lower than the second potential. After changing to the third potential, the potential of the first terminal of the first transistor is changed from the third potential to the first potential. The semiconductor device has a function of making the second terminal of the first transistor in a floating state. The first transistor includes a channel formation region in the oxide semiconductor film. |
| priorityDate | 2013-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.