http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102154336-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28593 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2014-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102154336-B1 |
| titleOfInvention | Field-Effect Transistors for High Voltage Operation and Manufacturing Method Thereof |
| abstract | The present invention relates to a field effect transistor for high voltage driving and a method of manufacturing the same, and includes a gate electrode structure in which a gate head extending in a drain direction is supported by an electric field electrode embedded under a gate head region to enable high voltage driving. Accordingly, by supporting the gate head extended in the drain direction with an electric field electrode electrically spaced apart using an insulating film, the gate electrode with the extended gate head can be stably manufactured, and the gate resistance is increased by the gate head extended in the drain direction. The electric field peak value between the gate and the drain is decreased by the gate electrode having the gate electrode extending in the drain direction and the electric field electrode close to the gate, thereby increasing the breakdown voltage of the device. |
| priorityDate | 2014-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.