| abstract |
An apparatus and method for processing a substrate according to a PECVD process is described. In order to change the deposition rate profile across the substrate, the temperature profile of the substrate is adjusted. To change the deposition rate profile across the substrate, the plasma density profile is adjusted. To reduce the formation of low quality deposits on the chamber surfaces and improve plasma density uniformity, the chamber surfaces exposed to the plasma are heated. To monitor the progress of the deposition process and trigger the substrate temperature profile, plasma density profile, pressure, temperature, and control actions involving the flow of reactants, in situ metrology can be used. have. |