http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102142711-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| filingDate | 2013-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102142711-B1 |
| titleOfInvention | Light emitting device |
| abstract | The light emitting device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, an active layer disposed under the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed under the active layer; A protective layer disposed on the light emitting structure and including an uneven structure provided on an upper surface; A first electrode electrically connected to the first conductivity type semiconductor layer; A second electrode electrically connected to the second conductivity type semiconductor layer; Including, the top surface of the first conductivity-type semiconductor layer is provided flat, the thickness of the first conductivity-type semiconductor layer is provided from 1 micrometer to 1.5 micrometers. |
| priorityDate | 2013-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.