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filingDate 2014-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102124209-B1
titleOfInvention Semiconductor memory device
abstract A semiconductor memory device is provided that includes variable resistance memory cells. The semiconductor memory device includes a first memory segment including a plurality of first variable resistance memory cells arranged along first and second directions perpendicular to each other and a first source line electrically connected to the first variable resistance memory cells, And a second memory segment including a plurality of second variable resistance memory cells arranged along the first and second directions and a second source line electrically connected to the second variable resistance memory cells. The first and second source lines can be electrically separated from each other.
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type http://data.epo.org/linked-data/def/patent/Publication

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