http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102120509-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2013-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102120509-B1 |
| titleOfInvention | Composite substrate manufacturing method, and composite substrate |
| abstract | After the semiconductor substrate 1 and the supporting substrate 3 are bonded together, the composite substrate is manufactured by thinning the semiconductor substrate 1 to obtain a composite substrate 8 having a semiconductor layer 6 on the supporting substrate 3 As a method, a coating film 4a containing polysilazane is formed on a surface to which the supporting substrate 3 is bonded, and a silicon-containing insulating film is subjected to a firing treatment to heat the coating film 4a to 600°C or more and 1200°C or less. (4) is formed, and thereafter, the semiconductor substrate 1 and the supporting substrate 3 are pasted together through the insulating film 4, thereby suppressing poor bonding due to surface roughness and defects of the supporting substrate and simplifying the composite substrate. Get |
| priorityDate | 2012-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.