http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102118907-B1

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filingDate 2018-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102118907-B1
titleOfInvention Light emitting diode and fabricating method thereof
abstract The present invention discloses a light emitting diode and its manufacturing method. According to an embodiment of the present invention, the light emitting diode is a second conductivity including a first conductivity type substrate, a seed layer coated on the first conductivity type substrate, and a plurality of second conductivity type nanorods growing from the seed layer. A type oxide layer, a transparent electrode layer including a plurality of metal nanowires formed on the second conductivity type oxide layer and an electrode formed on the first conductivity type substrate, the plurality of second conductivity type nanorods The morphology (Morphology) can be controlled based on the catalyst (catalyst).
priorityDate 2018-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.