http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102117302-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102117302-B1 |
| titleOfInvention | Ion implantation methods |
| abstract | The present invention provides a method of forming an ion implantation region in a semiconductor device. The method comprises (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern formed from a chemically amplified photoresist composition comprising a matrix polymer having an acid labile group, a photoacid generator and a solvent on a semiconductor substrate; (c) coating the descumming composition on a photoresist pattern (where the descumming composition comprises a matrix polymer; an acid generator selected from a thermal acid generator, a photoacid generator, and combinations thereof; and a solvent) do); (d) exposing the coated semiconductor substrate to conditions for generating acid from an acid generator in a discumining composition; (e) removing the remaining cumulative composition and scum from the substrate by contacting the coated semiconductor substrate with a cleaning agent; (f) ion implantation using a plurality of semiconductor substrate regions using a photoresist pattern as an implantation mask. The method can find particular applicability in the manufacture of semiconductor devices. |
| priorityDate | 2012-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 222.