| abstract |
An object of the present invention is to provide a resist underlayer film material having excellent alkaline hydrogen peroxide water resistance, good embedding/planarization properties and dry etching properties, a pattern forming method using the same, and a resist underlayer film forming method. The said subject is a resist underlayer film material used for a multilayer resist method, (A1) One or two or more types of compounds represented by the following general formula (X), and (B) A resist underlayer film material containing an organic solvent. Is solved by (In the formula, n 01 represents an integer of 1 to 10, and when n 01 is 2, W represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms, and n 01 is other than 2 In the case of an integer, W represents an n 01 -valent organic group having 2 to 50 carbon atoms, and Y represents a single bond or a divalent linking group that may contain an oxygen atom having 1 to 10 carbon atoms.) |