http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102114237-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2014-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102114237-B1 |
| titleOfInvention | Semiconductor device and method for fabricating the same |
| abstract | It is to provide a semiconductor device including an asymmetric transistor capable of improving a linear component in a Vd-Id characteristic compared to a symmetric transistor. The semiconductor device is a gate structure formed on a substrate, formed on one side of the gate structure, non-formed on the other side of the gate structure, and a source / drain extension region doped with a first type impurity, on one side of the gate structure A halo region formed, non-formed on the other side of the gate structure, and doped with the second type impurity different from the first type impurity, a first source formed on one side of the gate structure, and doped with the first type impurity And a drain region and a second source / drain region formed on the other side of the gate structure and doped with the first type impurity. |
| priorityDate | 2014-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.