http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102113065-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102113065-B1 |
| titleOfInvention | Semiconductor device and method for manufacturing the same |
| abstract | The present invention provides a transistor using an oxide semiconductor, which has excellent electrical properties, and a method for manufacturing the same. A transistor comprising an oxide semiconductor film formed on a base insulating film, a gate electrode overlapping through the oxide semiconductor film and a gate insulating film, and a pair of electrodes functioning as a source electrode and a drain electrode in contact with the oxide semiconductor film, The base insulating film has a first oxide insulating film partially in contact with the oxide semiconductor film, and a second oxide insulating film formed around the first oxide insulating film, and an end portion of the oxide semiconductor film crossing the channel width direction of the transistor is disposed on the second oxide insulating film. Located. |
| priorityDate | 2011-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.