http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102112404-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2018-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102112404-B1 |
| titleOfInvention | Semiconductor thin film, and method for manufacturing same, and thin film transistor containing same |
| abstract | Preparing a substrate in the chamber, forming a first thin film comprising tin (Sn) and oxygen (O) on the substrate, and including tin (Sn) and sulfur (S) on the first thin film A method of manufacturing a semiconductor thin film may be provided, including the step of forming a second thin film, wherein the first thin film and the second thin film are formed by a vacuum process. |
| priorityDate | 2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.