| abstract |
A gate alignment contact and a method of forming a gate alignment contact are disclosed. For example, a method of manufacturing a semiconductor structure includes forming a plurality of gate structures on an active region formed on a substrate. Each of the gate structures includes a gate dielectric layer, a gate electrode, and sidewall spacers. A plurality of contact plugs are formed, and each contact plug is formed between sidewall spacers of two adjacent gate structures among the plurality of gate structures. A plurality of contacts are formed, and each contact is formed between sidewall spacers of two adjacent gate structures among the plurality of gate structures. The plurality of contacts and the plurality of gate structures are formed subsequent to the formation of the plurality of contact plugs. |