http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102102718-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7858 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2012-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102102718-B1 |
| titleOfInvention | Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element |
| abstract | In a fin-type structure transistor using an oxide semiconductor material, there is a problem in that, as the size becomes smaller, a decrease in ON current and an increase in variation in electrical characteristics become remarkable. The semiconductor device of the present invention is formed on an insulating surface, an oxide semiconductor layer including a channel formation region and a pair of low-resistance regions interposed between the channel formation region, a gate insulating film covering the top and side surfaces of the oxide semiconductor layer, A source having a gate electrode covering an upper surface and a side surface of the channel formation region with a gate insulating film interposed therebetween, and an electrode electrically connected to the low resistance region, wherein the electrode is electrically connected to at least the side surface of the low resistance region. The contact resistance between the electrode and drain electrode was reduced. |
| priorityDate | 2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.