http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102101039-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K2217-0018 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K2005-00195 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K2005-00032 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-0315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0013 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2013-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102101039-B1 |
| titleOfInvention | Semiconductor device |
| abstract | The present invention provides a semiconductor device using a logic circuit having a high driving frequency by controlling a threshold voltage of a transistor. Alternatively, a semiconductor device using a logic circuit with reduced power consumption is provided. A semiconductor transistor having a channel and a pair of gate electrodes formed by sandwiching the semiconductor film, a first transistor and a second transistor having a source electrode and a drain electrode formed in contact with the semiconductor film, and controlling a potential applied to the pair of gate electrodes By doing so, the characteristics of the first transistor are normally turned on, and the characteristics of the second transistor are normally turned off. This makes the inverter circuit with a high driving frequency. The inverter circuit can be self-oscillated by connecting the output means of the inverter circuit of the last stage and the input terminal of the inverter circuit of the first stage by connecting the inverter means in series. |
| priorityDate | 2012-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.