http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102098288-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate | 2018-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102098288-B1 |
| titleOfInvention | Method for measuring doping concentration of semiconductor material , and recording medium for computer program using the same |
| abstract | In the method of measuring the doping concentration of a semiconductor material, in a transistor structure manufactured using a semiconductor material as an active layer, a drain current according to a gate voltage applied to a gate electrode is measured, and the measured drain current is differentiated by a gate voltage twice to 2 Disclosed is a method comprising obtaining peaks and deriving a doping concentration of the semiconductor material using a distance between two peaks. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230112842-A |
| priorityDate | 2018-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.