http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102097171-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2013-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102097171-B1 |
| titleOfInvention | Semiconductor device |
| abstract | The present invention provides a transistor in which short-channel effects are not substantially generated even when the channel length is small, and switching characteristics are obtained. In addition, a semiconductor device having high integration using the transistor is provided. It is a transistor using an oxide semiconductor film in which a short-channel effect generated in a transistor using silicon does not substantially occur, and the channel length is 5 nm or more and less than 60 nm, and the channel width is 5 nm or more and less than 200 nm. At this time, the channel width is made 0.5 to 10 times the length of the channel. |
| priorityDate | 2012-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.