http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102095939-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
filingDate 2015-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102095939-B1
titleOfInvention Semiconductor device
abstract The present invention imparts high field effect mobility to transistors using oxide semiconductors. In addition, a highly reliable semiconductor device using the transistor is provided. In a transistor having a structure in which an oxide semiconductor layer is stacked through a gate insulating layer over a gate electrode layer, it functions as a current path (channel) of the transistor, sandwiches an oxide semiconductor layer containing n-type impurities, and is more conductive than the oxide semiconductor layer. It is set as the structure containing this low oxide semiconductor layer. In addition, in the oxide semiconductor layer serving as the channel, the concentration of the n-type impurity on the gate insulating layer side is made higher than that on the back channel side. With the above structure, the channel is separated from the interface of the insulating layer in contact with the oxide semiconductor stack to form a buried channel.
priorityDate 2012-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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