| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2013-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102094568-B1 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A semiconductor device formed using an oxide semiconductor layer and having little variation in electrical properties is provided. A highly reliable semiconductor device comprising an oxide semiconductor layer and exhibiting stable electrical properties is provided. In addition, a method for manufacturing a semiconductor device is provided. In a semiconductor device, an oxide semiconductor layer is used for the channel formation region, a multilayer film is provided that includes an oxide layer surrounding the oxide semiconductor layer, and the end of one end face of the multilayer film has a curvature. |
| priorityDate |
2012-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |