http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102091350-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17758 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0944 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-1737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-1776 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-173 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-0944 |
filingDate | 2019-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2020-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2020-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-102091350-B1 |
titleOfInvention | Programmable logic device |
abstract | The present invention provides a PLD in which a configuration memory is formed by a nonvolatile memory comprising a small number of transistors, and the arrangement area of the configuration memory is reduced. In addition, it provides a PLD that is easy to respond to dynamic reconstruction and has a high startup time. It is a programmable logic device having a memory element, a selector, and an output portion, and the memory element has a transistor in which a channel is formed in an oxide semiconductor film, a storage capacitor and an inverter connected to one of the source and drain of the transistor, and the inverter is a selector. Connected, the selector provides a programmable logic device connected to the output. |
priorityDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.