| abstract |
The semiconductor module includes a first conductive plate, a first switching element mounted on the first conductive plate, a second conductive plate formed on the first switching element, and a second switching layer laminated on the second conductive plate. An element, a third conductive plate formed on the second switching element, and first and second control terminals. Each switching element is comprised using silicon carbide. The convex part which protrudes toward the 1st element upper surface from the said 2nd lower conductive plate surface, and is joined with the 1st upper electrode is formed in the 2nd lower conductive plate surface of a 2nd conductive plate. |