| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2017-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102072531-B1 |
| titleOfInvention |
Processing method, method of manufacturing semiconductor device, substrate processing apparatus and program |
| abstract |
Treating the substrate held in the substrate holding region of the substrate holding portion including the heat insulating region on one end side and the substrate holding region on the other end side at a first temperature in the processing chamber; A first cleaning step of supplying a cleaning gas to the heat insulation region at a second temperature lower than the first temperature and higher than the room temperature after the substrate held in the substrate holding portion is carried out; And a second cleaning step of supplying a cleaning gas to the substrate holding region at a third temperature lower than the second temperature after carrying out the substrate held by the substrate holding portion. |
| priorityDate |
2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |