http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102072426-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2016-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102072426-B1 |
| titleOfInvention | Pattern forming method and actinic ray-sensitive or radiation-sensitive resin composition |
| abstract | This invention hardly produces the dispersion | variation in thickness between manufacture lots, and provides the pattern formation method which can be applied suitably for gray scale exposure, and actinic-ray-sensitive or radiation-sensitive resin composition. The pattern formation method of this invention forms the film | membrane of thickness T on a board | substrate using the actinic-ray-sensitive or radiation-sensitive resin composition containing resin and the acid generator which change solubility to a developing solution by the action of an acid. The pattern formation method which has the process A to perform, the process B which exposes a film | membrane, and the process C which develops an exposed film | membrane using a developing solution and forms a pattern, The film formed in process A is the following conditions 1 and 2 Meet at least one of them. Condition 1: When the thickness T of the film is 800 nm or more, the value of γ is less than 10000. Condition 2: When the thickness T of the film is less than 800 nm, the value of γ is less than 5000. |
| priorityDate | 2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 207.