| abstract |
Regarding the metal gate replacement integration scheme, the present disclosure describes removing polysilicon gate electrodes with high sensitivity wet etch chemistry without damaging the surrounding layers. For example, the wet etch chemistry may include one or more alkaline solvents with sterically hindered amine structures, buffer systems including tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water. . |