http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102069277-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-105 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-10 |
| filingDate | 2016-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102069277-B1 |
| titleOfInvention | Seed Selection and Growth Methods for Group III Nitride Bulk Determination of Reduced Cracks |
| abstract | In one example, the present invention relates to (a) measuring the X-ray oscillation curve of a seed crystal at one or more points, (b) quantifying the peak width of the measured X-ray oscillation curve, and (c) determining the distribution of quantified peak widths. A method of growing the bulk crystals of Group III nitride using the seed crystals selected to evaluate is provided. The invention also includes a method of selecting seed crystals for growing bulk crystals of group III nitride. Bulk crystals of group III nitride may be grown in supercritical ammonia or group III metal melt using at least one seed selected by the method described above. |
| priorityDate | 2015-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.