http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102068956-B1

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filingDate 2012-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102068956-B1
titleOfInvention Thin film transistor, thin film transistor array substrate, and method of fabricating the same
abstract The present invention includes the steps of continuously depositing a second metal layer made of copper and a first metal layer on a substrate; Performing a plasma process to form a copper nitride layer on the second metal layer; Patterning the copper nitride layer, the second metal layer, and the first metal layer to form a gate electrode; Forming a first gate insulating film made of silicon nitride on the substrate including the gate electrode; Forming a second gate insulating film made of silicon oxide on the first gate insulating film; Forming a semiconductor layer of an oxide semiconductor material on the second gate insulating film; It provides a method of manufacturing a thin film transistor comprising forming a source electrode and a drain electrode spaced apart from each other on the semiconductor layer.
priorityDate 2012-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 44.