http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102068636-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2012-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102068636-B1 |
| titleOfInvention | Improved intrench profile |
| abstract | A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in the trench of the substrate, the liner layer having a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may be initially flowable after deposition, and may have a second density less than the first density of the liner. The method may further comprise exposing the substrate to a dry etchant, wherein the etchant removes a portion of the second dielectric layer and the first liner layer to form a recess, and the dry etching The agent comprises a fluorine-containing compound and molecular hydrogen, and the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1 :. 1.2 to about 1: 1. |
| priorityDate | 2011-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.