| abstract |
A field effect transistor having a gate insulating layer, a gate electrode, a semiconductor layer, a source electrode, and a drain electrode, wherein the gate insulating layer includes an organic compound including a bond of silicon and carbon, and a bond of a metal atom and an oxygen atom. And a metal compound, wherein the gate insulating layer comprises 10 to 180 parts by weight of the metal atoms with respect to 100 parts by weight of the carbon atoms and silicon atoms in total. It provides a FET with low threshold voltage and also with reduced leakage current. |